| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon |
IGBT HighspeedH3technologyoffers: •Ultra-lowlossswitchinglossesthankstoKelvinemitterpin packageincombinationwithHighspeedH3technology •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeat |
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Infineon |
IGBT HighspeedH3technologyoffers: •Ultra-lowlossswitchinglossesthankstoKelvinemitterpin packageincombinationwithHighspeedH3technology •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeat |
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Infineon |
IGBT HighspeedH3technologyoffers: •Ultra-lowlossswitchinglossesthankstoKelvinemitterpin packageincombinationwithHighspeedH3technology •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeat |
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Infineon |
IGBT • VCE = 650 V • IC = 120 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and thr |
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Desde 2024. D4U Semiconductor.
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