| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon |
IHW20T120 = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Short circu |
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Infineon Technologies |
IHW15N120R • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop ® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon |
IHW30N160R2 • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution G - high ruggedness, temperature stable |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon |
IGBT in Trench and Fieldstop Tech s, sine halfwave Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Short circuit withstand time 1) m o .c U 4 t e e h S a t a .D w w w G E Markin |
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Infineon |
IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable be |
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Infineon |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5s TRENCHSTOP™ and fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetoposi |
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Infineon |
IGBT •Offershighbreakdownvoltageof1350Vforimprovedreliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness, |
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Infineon |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon |
IGBT •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highrugge |
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Infineon Technologies |
Low Loss DuoPack • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C • TrenchStop® and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy pa |
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Infineon |
IHW20R120R2 • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon |
IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchin |
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Infineon |
IHW30N90R • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive tempe |
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Infineon |
IGBT •Powerfulmonolithicreverse-conductingdiodewithlowforward voltage •TRENCHSTOPTMtechnologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowVCEsatandlowEoff -easyparallelswitching |
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Infineon |
IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution G - high ruggedness, temperature stable |
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Desde 2024. D4U Semiconductor.
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