Infineon IGP Hoja de datos

No.	parte #	Fabricante	Descripción
1	IGP30N65F5	Infineon	IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature
2	IGP30N60H3	Infineon	IGBT TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •comp
3	IGP20N65F5	Infineon	IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •Qua
4	IGP15N60T	Infineon	IGBT ltage Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Marking Code Package G1
5	IGP06N60T	Infineon	IGBT  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b
6	IGP01N120H2	Infineon Technologies	IGBT Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09mJ 0.09mJ 0.09mJ Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK) 2
7	IGP03N120H2	Infineon Technologies	IGBT
8	IGP30N60T	Infineon	IGBT TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time 2) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 ±20 5
9	IGP20N65H5	Infineon	IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •Maximumjunctiontemperature175°C •Qua
10	IGP30N65H5	Infineon	IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature
11	IGP20N60H3	Infineon	IGBT TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •comp
12	IGP40N65F5	Infineon	IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature
13	IGP40N65H5	Infineon	IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperatur
14	IGP50N60T	Infineon	IGBT  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very
15	IGP10N60T	Infineon	IGBT  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply  TRENCHSTOP™
16	P30N60T	Infineon Technologies	IGP30N60T lector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time 1) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 ±20 5 187 -40...+175 -55...