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Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoH |
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Automotive MOSFET |
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Infineon |
Power Transistor • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC100N08S5N043 Product Summary VDS RDS(on) ID 80 V 4.3 mW 100 A PG-TDSON-8 |
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Infineon |
Automotive MOSFET • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoH |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.0 mW 100 A PG-TDSON-8 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pro |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
Automotive MOSFET • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • R |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoH |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.0 mW 120 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pr |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.8 m 120 A PG-TDSON-8 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pro |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.5 mW 100 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pr |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.5 mW 100 A PG-TDSON-8 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Pro |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level 1 • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temper |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoH |
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Infineon |
Automotive MOSFET • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Desde 2024. D4U Semiconductor.
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