| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon |
IGBT • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications G E offers : - very tight parameter distribution - high ruggedness, tem |
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Infineon |
IGBT •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highrugge |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat •LowEMI •Q |
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Infineon |
Schottky diode • VRRM = 2000 V • IF = 40 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage |
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Infineon |
IGBT afe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine ha |
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Infineon |
IGBT • VCE = 650 V • IC = 40 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-lev |
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Desde 2024. D4U Semiconductor.
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