| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon |
IGBT-Module • 10.2kVACIsolation • AlSiC Base Plate for increased Thermal Cycling Capability • PackagewithCTI>600 • HighCreepageandClearanceDistances ModuleLabelCode BarcodeCode128 DMX-Code preparedby:TD approvedby:DTS ContentoftheCode M |
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Infineon |
IGBT-Module • LowSwitchingLosses • LowVCEsat • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances • IsolatedBasePlate • StandardHousing ModuleLabelCo |
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Infineon |
IGBT 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • LowSwitchingLosses • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceD |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • LowVCEsat • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepa |
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Infineon |
IGBT • Electrical features - VCES = 6500 V - IC nom = 600 A / ICRM = 1200 A - Low VCE,sat • Mechanical features - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C - High creepage and clearance |
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Infineon |
IGBT-Module • ExtendedoperatingtemperatureTvjop • LowVCEsat • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepageandclearancedistances • Isolatedbas |
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Infineon |
IGBT • LowSwitchingLosses • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances • IsolatedBasePlate • StandardHousing ModuleLabelCo |
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Infineon |
IGBT • LowSwitchingLosses • LowVCEsat • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceDistances • IsolatedBasePlate • Standar |
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Desde 2024. D4U Semiconductor.
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