Infineon FZ4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	AUIRFZ44N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Descrip
2	AUIRFZ44VZS	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * AUIRFZ44VZS HEXFET® Power MOSFET VDSS RDS(on)
3	FZ400R12KE3_B1	Infineon	IGBT nternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-
4	FZ400R12KE4	Infineon	IGBT • ExtendedOperationTemperatureTvjop • LowSwitchingLosses • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceD
5	AUIRFZ44ZS	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS HEXFET® Power MOSFET 55V RDS(on) max. 13.9
6	AUIRFZ44Z	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS HEXFET® Power MOSFET 55V RDS(on) max. 13.9
7	FZ400R12KS4	Infineon	IGBT-Module • High Short Circuit Capability, Self Limiting Short CircuitCurrent • LowSwitchingLosses • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances •
8	FZ400R12KS4P	Infineon	IGBT • Highshort-circuitcapability • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanischeEigenschaften • GehäusemitCTI>400 • GroßeLuft-undKriechstrecken • IsolierteBodenplatte • Kupferbodenpl
9	FZ400R12KP4	Infineon	IGBT • ExtendedOperationTemperatureTvjop • LowVCEsat • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceDistances • IsolatedBas
10	FZ400R12KE3	Infineon	IGBT rnerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emi
11	FZ400R17KE4	Infineon	IGBT • ExtendedOperationTemperatureTvjop • LowVCEsat • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceDistances • IsolatedBas
12	FZ400R17KE3	Infineon	IGBT GE = 15 V IC = 400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 16,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C E
13	FZ400R33KL2C_B5	Infineon	IGBT MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 3300 V, VGE = 0 V, Tvj = 25°C Gate-Emitte
14	FZ400R65KE3	Infineon	IGBT • LowVCEsat MechanicalFeatures • AlSiC base plate for increased thermal cycling capability • Extended storage temperature down to Tstg = -55°C • PackagewithCTI>600 • Package with enhanced insulation of 10.4kV AC 10s • Highcreepageandclearanc