| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon |
IGBT • Electrical features - VCES = 1200 V - IC nom = 800 A / ICRM = 1600 A - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient • Mechanical features - Standard housing - 4 kV AC 1 min insulation - High creepage and clearance distances - |
|
|
|
|
Infineon |
IGBT atecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25° |
|
|
|
|
Infineon |
IGBT-Module • ExtendedoperatingtemperatureTvjop • LowVC |
|
Desde 2024. D4U Semiconductor.
|