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Infineon |
IGBT-Module turationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 11,5 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +1 |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • ExtendedOperationTemperatureTvjop • High Short Circuit Capability, Self Limiting Short CircuitCurrent MechanicalFeatures • 2.5kVAC1minInsulation • PackagewithCTI>400 • HighCreepageand |
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Infineon |
IGBT llector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 11,5 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge |
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Infineon |
IGBT • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-ap |
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Infineon |
IGBT = 15 V IC = 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 12,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eing |
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Infineon |
IGBT = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 12,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj |
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Infineon |
IGBT Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 11,5 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharg |
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Infineon |
IGBT rgylossperpulse (） Turn-offenergylossperpulse SCdata － Thermalresistance,junctiontocase － Thermalresistance,casetoheatsink Temperatureunderswitchingconditions IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 12,0 mA, VCE = VG |
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Infineon |
IGBT • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-ap |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • LowVCEsat • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IntegratedNTCtemperaturesensor • IsolatedBasePlate • SolderContactTechnology • StandardHousing • Pre-appliedThermalIn |
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Infineon |
IGBT • Lowswitchinglosses • LowVCEsat • Tvjop=150°C MechanicalFeatures • Highpowerandthermalcyclingcapability • Isolatedbaseplate • Copperbaseplate • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode |
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Infineon |
IGBT • Electrical features - VCES = 1200 V - IC nom = 300 A / ICRM = 600 A - Integrated current sensor - Low VCE,sat - Tvj,op = 150°C - VCE,sat with positive temperature coefficient • Mechanical features - PressFIT contact technology - Pre-applied thermal |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:MB approvedby:MK ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(Pro |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • LowVCEsat • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceDistances • IsolatedBas |
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Infineon |
IGBT-Module = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 12,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcap |
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Infineon |
IGBT-Module • LowVCEsat • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • HighPowerDensity • IsolatedBasePlate • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU approvedby:MK Contentof |
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Infineon |
IGBT 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 4,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Ein |
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Infineon |
IGBT ector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 12,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VG |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityupto650V • IncreasedDC-linkvoltage • Highshort-circuitcapability • Lowswitchinglosses • LowVCEsat • Tvjop=150°C • TrenchIGBT4 MechanicalFeatures • IntegratedNTCtemperaturesensor • Isolatedbas |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • IncreasedDClinkVoltage • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C MechanicalFeatures • IntegratedNTCtemperaturesensor • IsolatedBase |
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Desde 2024. D4U Semiconductor.
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