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Infineon |
IGBT • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-ap |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Date |
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Infineon |
IGBT wellenspannung Gatethresholdvoltage IC = 8,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 2 |
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Infineon |
IGBT = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 9,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputca |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Date |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:MB approvedby:MK ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(Pro |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU approvedby:MK ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(Pro |
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Infineon |
IGBT E = 15 V IC = 200 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 8,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Ei |
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Infineon |
IGBT • Electrical features - VCES = 1700 V - IC nom = 225 A / ICRM = 450 A - Integrated temperature sensor - High current density - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient • Mechani |
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Infineon |
IGBT • High Short Circuit Capability, Self Limiting Short CircuitCurrent • LowSwitchingLosses • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances • |
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Infineon |
IGBT-Module • LowVCEsat • Tvjop=150°C MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU approvedby:MK ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(Pro |
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Infineon |
IPM - Integrated current, voltage and temperature measurement - Tvjop max=150°C - Real time Tvj simulation - IGBT4 technology - Smart protection - TIM and pressfit technology - Modbus interface - 100% tested IPM - ROHS compliant - Integrated chip current |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Date |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU approvedby:MK ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(Pro |
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Infineon |
IGBT 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 9,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Einga |
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Infineon |
IGBT • Electrical features - VCES = 1700 V - IC nom = 225 A / ICRM = 450 A - Low VCE,sat - Tvj,op = 150°C • Mechanical features - Standard housing - Pre-applied thermal interface material Potential applications • Motor drives • Servo drives • UPS systems |
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Infineon |
IGBT-Module |
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Infineon |
IGBT-Module • Highshort-circuitcapability • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Isolatedbaseplate • Copperbasepl |
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Infineon |
IGBT 200 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 3,20 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Ein |
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Infineon |
IGBT rnerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emi |
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Desde 2024. D4U Semiconductor.
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