Infineon FD6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FD600R12IP4D	Infineon	IGBT • ExtendedOperationTemperatureTvjop • HighDCStability • High Short Circuit Capability, Self Limiting Short CircuitCurrent • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • 4kVAC1minInsulation • Packagewith
2	FD650R17IE4D_B2	Infineon	IGBT /G6 => * /G6 => * / G6 "'( DEF "V(FX YV IV[,F " " 6[]D 6^]D +'() +V() => * /G6 => * /G6 => * / G6 => * /G6 => * /G6 => * / G6 => * /G6 => * /G6 => * / G6 => * /G6 => * /G6 => * / G6 => * /G6 => * /G6 => * / G6 => * /G6 => * /G6 => * / G6 a -, S/M S!
3	FD600R06ME3_S2	Infineon	IGBT • Tvjop=150°C MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU approvedby:MK ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear)
4	FD600R17KE3_B2	Infineon	IGBT teladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz,
5	FD650R17IE4	Infineon	IGBT • ExtendedOperationTemperatureTvjop • HighDCStability • HighCurrentDensity • LowSwitchingLosses • Tvjop=150°C • LowVCEsat MechanicalFeatures • PackagewithCTI>400 • HighCreepageandClearanceDistances • HighPowerandThermalCycl