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Infineon |
Power-Transistor • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-313 Type IPD85P04P4L-06 Package PG-TO252-3-313 Marking 4P |
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Infineon |
Power-Transistor • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-313 Type IPD85P04P4-07 Package PG-TO252-3-313 Marking 4P |
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Infineon |
Rectifier Diode shold voltage Tvj = Tvj max Ersatzwiderstand slope resistance Durchlaßkennlinie 200 A ≤ iF ≤ 4000 A on-state characteristic Tvj = Tvj max Tvj = Tvj max v F = A + B ⋅ iF + C ⋅ ln ( iF + 1 ) + D ⋅ iF Sperrstrom ThermischeTvjEigenschaften = Tvj ma |
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Desde 2024. D4U Semiconductor.
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