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Infineon |
IGBT VGE = 15 V IC = 400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 16,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • ExtendedOperationTemperatureTvjop • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 2.5kVAC1minInsulation • Highmechanicalrobustness • In |
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Infineon |
IGBT pannung Collector-emittersaturationvoltage IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 16,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V In |
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Infineon |
IGBT Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V, VCE = 1800V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetrans |
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Infineon |
SiC Schottky Barrier diodes Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Q |
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Infineon |
1200V Schottky Diode No reverse recovery current / no forward recovery High surge current capability Temperature independent switching behaviour Low forward voltage even at high operating temperature Tight forward voltage distribution Specified dv/dt ruggedn |
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Infineon Technologies |
Step down LED Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
IGBT-Module • HighDCStability • HighDynamicRobustness • Highsurgecurrentcapability MechanicalFeatures • 10.2kVACIsolation • AlSiC Base Plate for increased Thermal Cycling Capability • PackagewithCTI>600 • HighCreepageandClearanceDistances Mod |
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Infineon |
IGBT , Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V, VCE = 1800V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetra |
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Infineon |
IGBT IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C) Tvj = 25°C VR = 1800 V Tvj = 125°C VGE = -15 V AbschaltenergieproPuls Reverserecoveryenergy IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C) Tvj = 25°C VR = 1800 V Tvj = 125°C VGE = -15 V Wärmew |
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Infineon |
1200V Schottky Diode No reverse recovery current / no forward recovery High surge current capability Temperature independent switching behaviour Low forward voltage even at high operating temperature Tight forward voltage distribution Specified dv/dt ruggedn |
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Infineon |
LED Driver |
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Infineon |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD40N03S4L-08 Product Summary V DS R DS(on),max ID 30 V 8.3 mW 40 |
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Infineon Technologies |
350mA Step Down LED Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
Power-Transistor )1 )(0 0( . o*( .0 DVQ[ 6 X@ VI'p] I J R 8%($%!" @IYIUM[MY B`UJWT 4WVLQ[QWVZ '41 =9 -8/4-=-/?1 =5>?5/> ,74@< 0;@4A8AB0=2 4 9C=2 B8>= 2 0A4 + & D4@A8>= 3 4D82 4 >=) ' ^S@8 ' ^S@6 < 8=8< 0;5>>B? @ |
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Infineon |
IGBT perrverzögerungsladung Recoveredcharge IF = 400 A, - diF/dt = 2600 A/µs (Tvj=125°C) Tvj = 25°C VR = 1800 V Tvj = 125°C VGE = -15 V AbschaltenergieproPuls Reverserecoveryenergy IF = 400 A, - diF/dt = 2600 A/µs (Tvj=125°C) Tvj = 25°C VR = 1 |
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Infineon |
Power-Transistor \M */ )1 )(0 0( . o*( .0 DVQ[ 6 X@ VI'p] I J R 8%($%!" @IYIUM[MY B`UJWT 4WVLQ[QWVZ '41 =9 -8/4-=-/?1 =5>?5/> ,74@< 0;@4A8AB0=2 4 9C=2 B8>= 2 0A4 + & D4@A8>= 3 4D82 4 >=) ' ^S@8 ' ^S@6 < 8=8< 0;5>>B |
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Desde 2024. D4U Semiconductor.
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