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Infineon |
Analog AMR/GMR Angle Sensors • Single and dual die sensor with AMR or GMR technology • Separate supply pins for top and bottom sensor • Low current consumption and quick start up • 180°(AMR) and 360°(GMR) contactless angle measurement • Output amplitude optimized for circuits wi |
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Infineon Technologies |
Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according |
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Infineon |
1200V Three Phase Gate Driver • Infineon Thin-Film-SOI technology • Fully operational to +1200 V • Integrated Ultra‐fast Bootstrap Diode • Floating channel designed for bootstrap operation • Output source/sink current capability +0.35 A/‐0.65 A • Tolerant to negative transient v |
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Infineon |
Crow Bar Diode Full blocking capability 50/60Hz over a wide temperature range High DC blocking stability High surge current capability High case non-rupture current Typische Anwendungen Rückschwing- Diode für Spannungszwischenkreisumrichter Typical Appl |
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Infineon |
Rectifier Diode ie 600 A ≤ iF ≤ 11000 A on-state characteristic Tvj = Tvj max , iF = 9,4 kA Tvj = Tvj max , iF = 2,0 kA Tvj = Tvj max Tvj = Tvj max Tvj = Tvj max v F = A + B ⋅ iF + C ⋅ ln ( iF + 1 ) + D ⋅ iF Sperrstrom reverse current Tvj = Tvj max , vR = VRRM T |
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Infineon |
Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • Dual P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 1.2 -0.39 V Ω A PG-SOT-363 4 5 6 • Qualified according to AEC Q101 • Halogen- |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 75 50 25 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD22N08S2L-50 Package Ordering Code P- TO252 -3-11 Q67060-S6062 Mark |
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Infineon Technologies |
Power-Transistor • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD22N08S2L-50 Product Summary V DS R DS |
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Infineon |
Transient Voltage Suppressor • ESD / transient protection of data and VBUS lines according to: – IEC61000-4-2 (ESD): ±25 kV (air) ±20 kV (contact) – IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns) – IEC61000-4-5 (Surge): ±5.5 A (8/20 µs) • Uni-directional, working voltage up to VR |
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Desde 2024. D4U Semiconductor.
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