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Infineon Technologies |
IPD20N03L •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) www.DataSheet4U.com •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating tem |
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Infineon |
The Soft 650 V Emitter Controlled Si Diode • VRRM = 650 V • IF = 20 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualifie |
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Infineon |
IGBT |
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Infineon |
IGBT • Highshort-circuitcapability • Highdynamicrobustness • Unbeatablerobustness • TrenchIGBT3 • VCEsatwithpositivetemperaturecoefficient MechanischeEigenschaften • 2,5kVAC1minIsolationsfestigkeit • GehäusemitCTI>400 • GroßeLuft-u |
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Infineon |
IGBT • ExtendedOperationTemperatureTvjop • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • 2.5kVAC1minInsulation • Highmechanicalrobustness • IntegratedNTCtemperaturesensor • IsolatedBase |
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Infineon |
Dual Phototransistor • Two Channel Coupler • SOIC-8A Surface Mountable Package • Standard Lead Spacing of .05" • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) • Isolation Test Voltage, 3000 VRMS • High Current Transfer Ratios ILD205T, 40 – 80% I |
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Infineon |
Dual Phototransistor • Two Channel Coupler • SOIC-8A Surface Mountable Package • Standard Lead Spacing of .05" • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) • Isolation Test Voltage, 3000 VRMS • High Current Transfer Ratios ILD205T, 40 – 80% I |
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Infineon |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
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Infineon |
Dual Phototransistor • Two Channel Coupler • SOIC-8A Surface Mountable Package • Standard Lead Spacing of .05" • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) • Isolation Test Voltage, 3000 VRMS • High Current Transfer Ratios ILD205T, 40 – 80% I |
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Infineon |
TVS Diode • ESD / transient / surge protection of one data / Vbus line exceding standard: – IEC61000-4-2 (ESD): ±30 kV (air / contact discharge) – IEC61000-4-4 (EFT): ±50 A (5/50 ns) – IEC61000-4-5 (surge): ±8 A (8/20 μs) • Bi-directional, symmetrical working |
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Infineon |
Protection Device |
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Infineon |
IGBT gerungsladung Recoveredcharge IF = 200 A, - diF/dt = 1100 A/µs (Tvj=125°C) Tvj = 25°C VR = 1800 V Tvj = 125°C VGE = -15 V AbschaltenergieproPuls Reverserecoveryenergy IF = 200 A, - diF/dt = 1100 A/µs (Tvj=125°C) Tvj = 25°C VR = 1800 V Tv |
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Infineon |
SiC Schottky Barrier diodes Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Q |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
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Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche r |
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Infineon |
Protection Device • ESD / transient protection of signal lines in low voltage applications according to: – IEC61000-4-2 (ESD): ±20 kV (air / contact) – IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns) – IEC61000-4-5 (Surge): ±2.5 A (8/20 μs) • Bi-directional, working vol |
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Infineon |
TVS Diode • ESD / Transient protection of susceptible I/O lines to: – IEC61000-4-2 (ESD): ±16 kV (air/contact discharge) – IEC61000-4-5 (surge): ±3 A (8/20 μs)) • Low clamping voltage • Low dynamic resistance: RDYN ≤ 0.2 Ω typ. • Supports applications with sig |
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Infineon |
Transient Voltage Suppressor Diodes Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, |
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Infineon |
Transient Voltage Suppressor Diodes • ESD/Transient/Surge protection of one data / Vbus line exceeding standard: – IEC61000-4-2 (ESD): ±30 kV (air/contact discharge) – IEC61000-4-4 (EFT): ±50 A (5/50 ns) – IEC61000-4-5 (surge): ±5 A (8/20 μs) • Bi-directional symmetrical working voltag |
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Infineon |
Transient Voltage Suppressor Diodes • ESD / Transient protection of data lines in 3.3 / 5 / 12 V applications according to : – IEC61000-4-2 (ESD) : ±20 kV (air) and ±18 kV (contact) – IEC61000-4-4 (EFT) : ±40 A (5/50ns) • Maximum working voltage: VRWM = -8 / +14 V • Very low reverse cu |
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Desde 2024. D4U Semiconductor.
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