Infineon CFY Hoja de datos

No.	parte #	Fabricante	Descripción
1	CFY25	Infineon	HiRel X-Band GaAs MOSFET
2	CFY27	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET r 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power diss
3	CFY66-08P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
4	CFY67-06	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
5	CFY67-08P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
6	CFY25-P	Infineon	HiRel X-Band GaAs MOSFET
7	CFY25-23	Infineon	HiRel X-Band GaAs MOSFET
8	CFY25-23P	Infineon	HiRel X-Band GaAs MOSFET
9	CFY25-20P	Infineon	HiRel X-Band GaAs MOSFET
10	CFY25-20	Infineon	HiRel X-Band GaAs MOSFET
11	CFY27-38	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET r 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power diss
12	CFY27-P	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET r 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power diss
13	CFY66	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
14	CFY66-08	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
15	CFY66-10	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
16	CFY66-10P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
17	CFY67	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
18	CFY67-08	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
19	CFY67-10	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
20	CFY67-10P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)