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Infineon |
Power MOSFET ions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) BSZ900N15NS3 G min. Values typ. Unit max. - - 3.3 K/W - - 60 Electrical characteristics, at T j=25 °C |
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Infineon |
Power MOSFET |
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Infineon |
Power MOSFET RWRUFRQWUROIRU9V\VWHPV 2ULQJVZLWFKHV G4 7DEOH.H\3HUIRUPDQFH3DUDPHWHUV 3DUDPHWHU 9'6 5'6 RQ PD[ ,' 4266 4* 99 7\SH2UGHULQJ&RGH #4;/-4 9DOXH 3DFNDJH 1(54%40/'8QLW 7 NΩ " O$ O$ 0DUNLQJ |
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Infineon |
Power MOSFET |
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Infineon |
Metal Oxide Semiconductor Field Effect Transistor •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoH |
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Infineon |
MOSFET •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoH |
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Infineon |
Power MOSFET • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Improved switching behaviour • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low |
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Infineon |
Power MOSFET •OptimizedforhighperformanceBuckconverter(Server,VGA) •VerylowFOMQOSSforHighFrequencySMPS •LowFOMSWforHighFrequencySMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanche |
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Infineon |
Power MOSFET • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superi |
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Infineon |
Power MOSFET |
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Infineon |
Power MOSFET • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according |
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Infineon |
Power MOSFET • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Super |
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Infineon |
Power MOSFET U ( 6 U ( A6B 2D :? 8 2 ? 5 C D @B 2 86 D 6> A6B 2D EB 6 , 4= 2C C , @= 56B :? 8 D 6> A6B 2D EB 6 # 4= :> 2 D :4 42 D 68@B I #' # EJU]N %,(&( %,( DWR\ 6 *# +# %))&( %).( /+ r*-* Z@ J K ( 8 U $ 9 ' = |
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Infineon |
Power MOSFET U ( 6 U ( A6B 2D :? 8 2 ? 5 C D @B 2 86 D 6> A6B 2D EB 6 , 4= 2C C , @= 56B :? 8 D 6> A6B 2D EB 6 # 4= :> 2 D :4 42 D 68@B I #' # EJU]N +1&. +*&( DWR\ 6 *# +# %1&( %)-0 ,0 r*,( Z@ J K ( 8 U $ 9 ' = |
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Infineon |
Power MOSFET @G6B 5:C C :A2 D :@? ) A6B 2D :? 8 2 ? 5 C D @B 2 86 D 6> A6B 2D E B 6 # 4= :> 2 D :4 42 D 68@B I #( # )# *# Z@ K L T ( 8 T .. $ - . 2 ? 5 $ - C 66 7 :8E B 6 , 6F A2 86 |
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Infineon |
Power MOSFET • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target |
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Infineon |
MOSFET •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadpla |
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Infineon |
MOSFET •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadpla |
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Infineon |
MOSFET •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadpla |
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Infineon |
MOSFET •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadpla |
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Desde 2024. D4U Semiconductor.
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