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Infineon |
digital absolute pressure sensor • High accuracy pressure sensing (±1.0 kPa), pressure range 40 to 115 kPa • Operating ambient temperature range -40°C to 125°C • Best in class low power consumption with dedicated power-down mode for energy saving • 10-, 12- or 14-bit resolution pres |
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Infineon Technologies AG |
OptiMOS2 Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche |
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Infineon |
Small-Signal-Transistor Product Summary · Dual N- and P -Channel Drain source voltage · Enhancement mode Drain-Source on-state · Logic Level resistance · Avalanche rated Continuous drain current · Pb-free lead plating; RoHS compliant VDS RDS(on) ID N 60 0.11 3.1 |
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Infineon Technologies AG |
OptiMOS2 Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • Dual n-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Aval |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S S S G 1 2 3 4 Top View Product Summary VDS RDS(on) ID -20 8 -14.9 V mΩ A 8 7 6 5 D D D D SIS00062 Type BSO201SP Pac |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 G1 S2 G2 1 2 3 4 Top View Product Summary VDS RDS(on) ID 8 7 6 5 -20 21 -8.2 V mΩ A D1 D1 D2 D2 SIS00070 Type BSO20 |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • Dual P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 G1 S2 G2 1 2 3 4 Top View Product Summary VDS RDS(on) ID 8 7 6 5 -20 67 -4.7 V mΩ A D1 D1 D2 D2 SIS00070 Type |
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Infineon Technologies |
Surface Mount Capacitive Silicon Absolute Pressure Sensor • • • • • • Ratiometric analog output Calibrated transfer function High accuracy over a large temperature range (1.5 kPa max. error over 0 ... 85 °C) CMOS compatible surface micromachining SMD housing Customized transfer functions available (KP120 Ex |
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Infineon Technologies |
SIPMOS Small-Signal-Transistor • Dual N- and P -Channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current N P -20 0.1 -3.7 V Ω A VDS RDS(on) ID 20 0.1 3.7 Enhancement mode • Logic Level • Avalanche rated • dv/dt rated Type BSO |
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Infineon |
Absolute Pressure Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
Power-Transistor • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • applications: battery management, load switching |
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Infineon Technologies |
Power-Transistor • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID BSO |
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Infineon |
Analog Absolute Pressure Sensor us substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Techn |
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Infineon |
Digital Absolute Pressure Sensor • Increased media robustness for current automotive requirements • High accuracy pressure sensing (± 1.03% FSS) • Integrated signal processing for external temperature sensor • SENT protocol interface • Real 12-bit pressure resolution • Real 12-bit t |
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Infineon |
Digital Absolute Pressure Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
Absolute Pressure Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies AG |
OptiMOS2 Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche |
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Infineon Technologies AG |
OptiMOS2 Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche |
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Infineon Technologies AG |
OptiMOS2 Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche |
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Infineon Technologies AG |
OptiMOS-P Small-Signal-Transistor • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalanche rated • dv /dt rated • Ideal for fast switching buck converter Product Summary V DS R DS(on),max ID -30 20 -9.1 V mΩ A P-DSO-8 53 Type BSO200P03S Package P-DSO |
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Desde 2024. D4U Semiconductor.
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