No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon |
Power-Transistor • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 V 2.4 mΩ 106 A • Low parasitic inductance • Low profile (<0.7 mm) • |
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Infineon |
Power-Transistor • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 5 60 • Low parasitic inductance • Low profile (<0.7 mm) • 100% aval |
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Infineon |
Power-Transistor • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 8.3 53 • Low profile (<0.7 mm) • Double-sided cooling • Low parasi |
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Infineon |
N-Channel Power MOSFET • Optimized for high performance buck converters • 100% avalanche tested • Low parasitic inductance • Qualified according to JEDEC1) for target applications • Low profile (<0.7 mm) • Pb-free plating; RoHS compliant • Halogen-free according to IEC6124 |
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Infineon |
N-Channel Power MOSFET best cooling capability through top-side cooling of the metal can. Hence, this packaging technology combined with the OptiMOS silicon enables highest efficiency levels while having mininal space requirements at the same time Features • Optimized tech |
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Infineon |
Power-Transistor • Optimized for high performance Buck converter • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 25 V 3.5 mW 69 A 13 nC 19 nC • Double-sided cooling • |
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Infineon Technologies |
Power MOSFET • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (<0.7 mm) • Avalanche rated • Qualified for consumer level application • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high switch |
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