logo

Infineon BSF DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
BSF024N03LT3G

Infineon
Power-Transistor

• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 V 2.4 mΩ 106 A
• Low parasitic inductance
• Low profile (<0.7 mm)
Datasheet
2
BSF050N03LQ3G

Infineon
Power-Transistor

• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 5 60
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% aval
Datasheet
3
BSF083N03LQG

Infineon
Power-Transistor

• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 8.3 53
• Low profile (<0.7 mm)
• Double-sided cooling
• Low parasi
Datasheet
4
BSF030NE2LQ

Infineon
N-Channel Power MOSFET

• Optimized for high performance buck converters
• 100% avalanche tested
• Low parasitic inductance
• Qualified according to JEDEC1) for target applications
• Low profile (<0.7 mm)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC6124
Datasheet
5
BSF077N06NT3G

Infineon
N-Channel Power MOSFET
best cooling capability through top-side cooling of the metal can. Hence, this packaging technology combined with the OptiMOS silicon enables highest efficiency levels while having mininal space requirements at the same time Features
• Optimized tech
Datasheet
6
BSF035NE2LQ

Infineon
Power-Transistor

• Optimized for high performance Buck converter
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 25 V 3.5 mW 69 A 13 nC 19 nC
• Double-sided cooling
Datasheet
7
BSF053N03LTG

Infineon Technologies
Power MOSFET

• Pb-free plating; RoHS compliant
• Dual sided cooling
• Low profile (<0.7 mm)
• Avalanche rated
• Qualified for consumer level application
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Optimized for high switch
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad