Infineon BGA Hoja de datos

No.	parte #	Fabricante	Descripción
1	BGA751N7	Infineon	SiGe Bipolar 3G/3.5G/4G Single-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2	BGA758L7	Infineon	5-6 GHz LNA
3	BGA123L4	Infineon	Small Footprint Ultra Low Current Low Noise Amplifier • Operating frequencies: 1550 - 1615 MHz • Ultra low current consumption: 1.1 mA • Wide supply voltage range: 1.1 V to 3.6 V • High insertion power gain: 18.2 dB • Low noise figure: 0.75 dB • 2 kV HBM ESD protection (including AI pin) • Ultra small
4	BGA5L1BN6	Infineon	18dB High Gain Low Noise Amplifier • Operating frequencies: 600 - 1000 MHz • Insertion power gain: 18.5 dB • Insertion Loss in bypass mode: 2.7 dB • Low noise figure: 0.7 dB • Low current consumption: 8.2 mA • Multi-state control: Bypass- and high gain-Mode • Ultra small TSNP-6-10 lea
5	BGA622GPS	Infineon Technologies AG	GPS Low Noise Amplifier echnologies SiGe MMIC 0HDVXUHG &LUFXLW 3HUIRUPDQFH All presented measurement values include losses of both PCB and connectors - in other words, the reference planes used for measurements are the PCB’s RF SMA connectors. Noise figure and gain results
6	BGA924N6	Infineon	Silicon Germanium Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7	BGA734L16	Infineon	Low Power Tri-Band UMTS LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8	BGA430	Infineon Technologies AG	Broad Band High Gain LNA
9	BGA612	Infineon Technologies AG	Silicon Germanium Broadband MMIC Amplifier • Cascadable 50Ω-gain block • 3 dB-bandwidth: DC to 2.8 GHz with 17.0 dB typical gain at 1.0 GHz • Compression point P-1dB = 7 dBm at 2.0 GHz • Noise figure F50Ω = 2.35 dB at 2.0 GHz • Absolute stable • 70 GHz fT - Silicon Germanium technology Applic
10	BGA616	Infineon Technologies AG	Silicon Germanium Broadband MMIC Amplifier
11	BGA915N7	Infineon Technologies	Silicon Germanium GPS Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 2 3 4 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12	BGA7H1N6	Infineon	Silicon Germanium Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13	BGA622L7	Infineon	Silicon Germanium Wide Band Low Noise Amplifier • High gain \|S21\|2 = 17.5 dB at 1.575 GHz \|S21\|2 = 16.8 dB at 1.9 GHz \|S21\|2 = 16.2 dB at 2.14 GHz • Low noise figure, NF = 0.95 dB at 1.575 GHz • Operating frequency range 0.5 - 6 GHz • Typical supply voltage: 2.75 V • On/Off-Switch • Output-match o
14	BGA735N16	Infineon	High Linearity Tri-Band LTE/UMTS LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15	BGA824N6	Infineon	Silicon Germanium Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16	BGA825L6S	Infineon	Silicon Germanium Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17	BGA925L6	Infineon	Silicon Germanium GNSS Low Noise Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18	BGA5M1BN6	Infineon	18dB High Gain Low Noise Amplifier • Operating frequencies: 1805 - 2200 MHz • Insertion power gain: 19.3 dB • Insertion Loss in bypass mode: 4.7 dB • Low noise figure: 0.65 dB • Low current consumption: 9.5 mA • Multi-state control: Bypass- and high gain-Mode • Ultra small TSNP-6-10 l
19	BGA416	Infineon Technologies AG	RF Cascode Amplifier • GMA = 23dB at 900MHz • Ultra high reverse isolation, 62 dB at 900MHz • Low noise figure, F50Ω = 1.3dB at 900MHz • On chip bias circuitry, 5.5 mA bias current at VCC = 3V • Typical supply voltage: 2.5 to 5.0V • SIEGET®-25 technology Applications • B
20	BGA420	Infineon Technologies AG	Si-MMIC-Amplifier teristics at TA = 25 °C, unless otherwise specified. Parameter AC characteristics VD = 3 V, Zo = 50 Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz I