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Infineon Technologies |
System Basis Chip • Two Low Drop Voltage Regulators • Window watchdog • Standard 16-bit SPI-interface • Supports μController Stop Mode • Sleep Mode (50µA) • VBAT Monitoring and fail-safe output • Overtemperature and short circuit protection • Power on and undervoltage |
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Infineon Technologies AG |
Silicon Switching Diode -02V/ -02W/ -07L4 t=1s Total power dissipation BAS16, TS ≤ 54 °C BAS16-02L, -07L4, TS ≤ 130 °C BAS16-02V, -02W, TS ≤ 120 °C BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C BAS16U, TS ≤ 113 °C BAS16W, TS ≤ 119 °C Junction temperature Storage temperature IF |
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Infineon Technologies AG |
Silicon Switching Diodes haracteristics Breakdown voltage I(BR) = 100 µA BAS78A BAS78B BAS78C BAS78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recover |
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Infineon |
Based on 32-bit Arm MCU an Arm® Cortex® M0+ processor and programmable and reconfigurable analog and digital blocks. Features • Automotive Electronics Council (AEC) AEC-Q100 qualified • 32-bit MCU subsystem - 24- or 48-MHz Arm® Cortex® M0+ CPU with DMA controller - Up to 12 |
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Infineon |
Based on 32-bit Arm MCU an Arm® Cortex® M0+ processor and programmable and reconfigurable analog and digital blocks. Features • Automotive Electronics Council (AEC) AEC-Q100 qualified • 32-bit MCU subsystem - 24- or 48-MHz Arm® Cortex® M0+ CPU with DMA controller - Up to 12 |
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Infineon |
Based on 32-bit Arm MCU an Arm® Cortex® M0+ processor and programmable and reconfigurable analog and digital blocks. Features • Automotive Electronics Council (AEC) AEC-Q100 qualified • 32-bit MCU subsystem - 24- or 48-MHz Arm® Cortex® M0+ CPU with DMA controller - Up to 12 |
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Infineon Technologies AG |
Silicon Schottky Diodes 25W BAS125-04W...06W 1For calculation of R thJA please refer to Application Note Thermal Resistance RthJS K/W 230 265 1 Nov-15-2001 BAS125W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. D |
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Infineon Technologies AG |
Silicon Schottky Diode mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Rf Unit max. nA typ. IR VF 385 530 800 400 650 950 100 150 mV CT - 16 1.1 - pF 2 Aug-16-2001 BAS125 |
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Infineon Technologies AG |
Silicon Switching Diode -02V/ -02W/ -07L4 t=1s Total power dissipation BAS16, TS ≤ 54 °C BAS16-02L, -07L4, TS ≤ 130 °C BAS16-02V, -02W, TS ≤ 120 °C BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C BAS16U, TS ≤ 113 °C BAS16W, TS ≤ 119 °C Junction temperature Storage temperature IF |
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Infineon Technologies AG |
Silicon Schottky Diode 0.1 10 mV µA V(BR) 70 V Symbol min. Values typ. max. Unit AC Characteristics Diode capacitanceVR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Charge carrier life time IF = 25 mA Series inductance LS 1.8 nH RF 34 100 CT 1.5 |
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Infineon |
Silicon Low Leakage Diode |
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Infineon Technologies |
Low VF Schottky Diode Array the attached curves. 1 2007-11-20 BAS3007A... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 95 Unit K/W Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. ty |
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Infineon Technologies |
Medium Power AF Schottky Diode ached curves. 1 2007-04-19 BAS3010B... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 82 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Ch |
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Infineon Technologies |
Low VF Schottky Diode . Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 38 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 |
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Infineon |
Basic LED Driver • • • • • • Overview 1 Channel device with integrated output stage (current source), optimized to drive LEDs Output current up to 360mA Low current consumption in sleep mode PWM-operation supported via VS- and EN-pin Integrated PWM dimming engine to |
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Infineon |
System Basis Chip (SBC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Block Description of State Machine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
Based on 32-bit Arm MCU an Arm® Cortex® M0+ processor and programmable and reconfigurable analog and digital blocks. Features • Automotive Electronics Council (AEC) AEC-Q100 qualified • 32-bit MCU subsystem - 24- or 48-MHz Arm® Cortex® M0+ CPU with DMA controller - Up to 12 |
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Infineon |
Based on 32-bit Arm MCU an Arm® Cortex® M0+ processor and programmable and reconfigurable analog and digital blocks. Features • Automotive Electronics Council (AEC) AEC-Q100 qualified • 32-bit MCU subsystem - 24- or 48-MHz Arm® Cortex® M0+ CPU with DMA controller - Up to 12 |
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Infineon |
Based on 32-bit Arm MCU an Arm® Cortex® M0+ processor and programmable and reconfigurable analog and digital blocks. Features • Automotive Electronics Council (AEC) AEC-Q100 qualified • 32-bit MCU subsystem - 24- or 48-MHz Arm® Cortex® M0+ CPU with DMA controller - Up to 12 |
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Infineon |
Silicon Schottky Diode |
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Desde 2024. D4U Semiconductor.
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