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Infineon |
MOSFET 8 11 - & % 2C' < <- + 8 1 & + - ?& + & Z % & 2C' < 4$ < 0V 2C ?& + & Z % 2C' < /& & 1 8 &8 E& I 8 = &8 - 1 = 1 8 &8 8 98 ;' ?( 8 &8 =& & 1- 8 " ! 0 0 KLMNOP 3Q 3QR 0 QR 8 98 S ; WXW WXW K OWY :: 0 0 KLMNOP 8 98 8 ]98 # $% ! ! ; 2 J |
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Infineon |
MOSFET 99 < ' 2< ,- 1 , . 1 2< ,- . 2 << . >; 3 9 :9 ,, 9 11 A 1& < & , &I 9 11 . & % & 2C' ; 4 ; 0V 2C &I 9 11 . & % 2C' ; ;. , 9 1 & , . >& , & Z % & 2C' ; 4 ; 0V 2C >& , & Z % 2C' ; /& & 1 9 &9 E& I 9 < &9 . 1 < 1 9 &9 9 :9 B' >( 9 |
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Infineon |
MOSFET &I 9 11 - & % 3C' ; ;- + 9 1 & + - >& + & Z % & 3C' ; 5 ; 0V 3C >& + & Z % 3C' ; /& & 1 9 &9 E& I 9 < &9 - 1 < 1 9 &9 9 :9 B' >( 9 &9 <& & 1- 9 " ! 0 0 KLMNOP 4Q 4QR 0 QR 9 :9 S B WXW WXW !K OWY 22 0 0 KLMNOP 9 :9 9 ]:9 # $% ! ! 23 |
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Infineon Technologies |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature |
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Infineon |
MOSFET |
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Infineon |
MOSFET |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctionte |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •Qua |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctionte |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature |
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Infineon Technologies |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctionte |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature17 |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature17 |
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Infineon |
MOSFET .2()(,01 32RR'-1'55 Y %+(3'.'*Q *0@ *055'5 -2' (0 E'3Q *0@ $"! B-501[\R )1- %055 Y %)5Q (0 25']-3,E' Y Fully q2)*,4,'- according to JEDEC for ,1-25(3,)* )SS*,/)(,015 Y ?XN43'' S*)(,1RK ^)*0R'1 43'' .0*- /0.S021- 3&&4$/#)$-%, ;<=> 600*!"#7 6$89 ,5 '5S |
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Infineon |
MOSFET % & 3B' ; / ; 1V 3B &I 9 22 . & % 3B' ; ;. , 9 2 & , . >& , & Z % & 3B' ; / ; 1V 3B >& , & Z % 3B' ; 0& & 2 9 &9 D& I 9 < &9 . 2 < 2 9 &9 9 :9 )' >( 9 &9 <& & 2. 9 " ! 1 1 KLMNOP 4Q 4QR 1 QR 9 :9 S ) WXW WXW !K OWY 55 1 1 KLMNOP 9 :9 |
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Infineon |
MOSFET 2C %I 8 11 - % $ 2C& ; ;- + 8 1 % + - >% + % Z $ % 2C& ; 4# ; 0V 2C >% + % Z $ 2C& ; /% % 1 8 %8 E% I 8 < %8 - 1 < 1 8 %8 8 98 B& >' 8 %8 <% % 1- 8 " ! 0 0 KLMNOP 3Q 3QR 0 QR 8 98 S B WXW WXW K OWY (( 0 0 KLMNOP 8 98 8 ]98 # $% ! ! |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •Dynamicallystresstested •Qualifi |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature17 |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature |
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Desde 2024. D4U Semiconductor.
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