Infineon 60R Hoja de datos

No.	parte #	Fabricante	Descripción
1	6R385P	Infineon	IPI60R385CP • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max
2	6R165P	Infineon	IPB60R165CP • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max
3	H30R1602	Infineon	IHW30N160R2 • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution G - high ruggedness, temperature stable
4	IPAW60R380CE	Infineon	MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications •Widedistanceof4.25mmbetweentheleads
5	60R070F7	Infineon	MOSFET •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)QgandRDS(on)Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Ex
6	FS660R08A6P2FB	Infineon	Drive Module /Description HybridPACK™DrivemodulewithEDT2IGBTandDiode VCES = 750 V IC = 660 A T T T Typical Applications •Automotive Applications •Hybrid Electrical Vehicles (H)EV •Motor Drives •Commercial Agriculture Vehicles Electrical Features •Blocki
7	IPP60R280E6	Infineon Technologies	MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage
8	IPD60R360P7S	Infineon	MOSFET •Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding  commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductsco
9	IPA60R280P6	Infineon	MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord
10	IPW60R016CM8	Infineon	MOSFET •Suitableforhardandsoftswitchingtopologiesthankstoan  outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Eas
11	IPW60R099CPA	Infineon	Power Transistor • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive A
12	IGLD60R190D1	Infineon	Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications acc
13	IPN60R600P7S	Infineon	Power-Transistor •Suitableforhardandsoftswitching(PFCandLLC) •IntegratedGateResistortoenableexcellentbalancebetweenefficiency andeaseofuse •RDS(on)Abelow1Ohmmm²,enableslowRDSON/package •ESDdiodefrom180mOhmsandabove •Ser
14	IPA60R250CP	Infineon Technologies	Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching
15	IGT60R190D1S	Infineon	600V enhancement-mode Power Transistor  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications
16	IPB60R600CP	Infineon Technologies	Power Transistor • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),ma
17	IPP60R165CP	Infineon Technologies	Power Transistor • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max
18	60R190E6	Infineon Technologies	IPA60R190E6 • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free drain pin 2 gate pin 1 Applications PFC stages, hard switching PWM stages and re
19	IKD06N60RF	Infineon Technologies	IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparamete
20	IPW60R041C6	Infineon Technologies	MOSFET << GC8K@E> & 8CF> - 4 * JK8> - 4 * JK8> - ! 0 @CM?K@E> 0