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Infineon Technologies |
Power Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product |
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Infineon |
Power MOSFET • Optimized for 5V driver application (Notebook, VGA, POL) Product Summary VDS 34 V • Low FOMSW for High Frequency SMPS • 100% avalanche tested RDS(on),max VGS=10 V VGS=4.5 V 12 mW 15 • Improved switching behaviour • N-channel • Very low on-re |
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Infineon |
SPD09N05 • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt • 175˚C operating temperature Ty |
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Infineon |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
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Infineon |
MOSFET •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table |
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Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature IPD09N03LA IPF |
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Infineon |
MOSFET ·DualN-channelOptiMOS™MOSFET ·Enhancementmode ·Logiclevel(4.5Vrated) ·Avalancherated ·100%Lead-free;RoHScompliant ·Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RD |
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Infineon |
MOSFET •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalperformance •N-channel •175°Crated •Pb-freeleadplating:RoHScompliant •Halogen-freeaccordingtoEC61249-2-21 •Highersolderjointreliabilityduetoenlar |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C o |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C o |
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Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
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Infineon Technologies |
N-Channel Power MOSFET • • • • • • • • Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target applications Super |
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Infineon Technologies |
MOSFET •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant Table1KeyPerfo |
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Infineon |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
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Infineon |
MOSFET •Optimizedforhighperformancebuckconverters •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScom |
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Infineon |
MOSFET ·DualN-channelOptiMOS™MOSFET ·Enhancementmode ·Logiclevel(4.5Vrated) ·Avalancherated ·100%Lead-free;RoHScompliant ·Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RD |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECfo |
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Infineon |
MOSFET •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPe |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECfo |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product |
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Desde 2024. D4U Semiconductor.
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