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Infineon |
Power-Transistor Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<93 |
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Infineon |
Power-Transistor Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<93 |
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Infineon |
MOSFET • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin |
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Infineon |
MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching |
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Infineon Technologies AG |
DSP Embedded Line and Port Interface Controller and presents some typical applications. • Chapter 2, Pin Description Lists pin locations with associated signals, categorizes signals according to function, and describes signals. • Chapter 3, Interface Description Describes the DELIC external inter |
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Infineon Technologies AG |
DSP Embedded Line and Port Interface Controller C Clock System Synchronization” 1.1 Clocking the VIP in LT-T Mode by DELIC Layer 1 Clock 1 6 .3 8 4 M H z DCXO 8 kH z PD MUX R EFCLK D ivid e r XCLK 1 6 .3 8 4 M H z PLL D ivid e r D ivid e r 1 5 .3 6 M H z IN C L K OSC /1 0 C e n tra l O ffice R |
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Infineon |
Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D |
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Infineon |
Power-Transistor Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<93 |
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Infineon |
MOSFET |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching |
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Infineon |
Power-Transistor • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according t |
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Infineon Technologies |
MOSFET • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according |
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Infineon Technologies |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superi |
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Infineon Technologies |
Power-Transistor • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC6 |
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Infineon |
Power-Transistor )#$ , - 1>4 $ , *# EBB5>D9C<9=9D54 2 I 2 ? >4G9B5 G9D8 1>' `T@8 % / D85 3 89@ 9C12 <5 D? 3 1BBI +# , 55 697EB5 6? B=? B5 45D19<54 9>6? B=1D9? > ,# , 55 697EB5 6? B=? B5 45D19<54 9>6? B=1D9? > CUPZ 6 Y@ J K |
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Infineon |
Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D |
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Infineon |
Power-Transistor Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1DEB5 Q) 2 6B55 <514 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<93 |
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Infineon |
MOSFET • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin |
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Desde 2024. D4U Semiconductor.
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