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Infineon |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
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Infineon Technologies |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
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Infineon |
Silicon Carbide MOSFET Very low switching losses Threshold-free on state characteristic Benchmark gate threshold voltage, VGS(th) = 4.5V 0V turn-off gate voltage for easy and simple gate drive Fully controllable dV/dt Robust body diode for hard commutation Te |
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Infineon |
MOSFET •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1) |
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Infineon |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
MOSFET •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1) |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET • Thermally-enhanced packaging, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion = –50 dBc - Adjace |
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Infineon |
MOSFET Very low switching losses Threshold-free on state characteristic Wide gate-source voltage range Benchmark gate threshold voltage, VGS(th) = 4.5V 0V turn-off gate voltage for easy and simple gate drive Fully controllable dV/dt Robust bod |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 3.0 mW 60 A PG-TDSON-8-56 • Half-Bridge - N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature |
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Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030... Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Chara |
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Infineon |
N-Channel Power MOSFET • Optimized for high performance buck converters • 100% avalanche tested • Low parasitic inductance • Qualified according to JEDEC1) for target applications • Low profile (<0.7 mm) • Pb-free plating; RoHS compliant • Halogen-free according to IEC6124 |
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Infineon |
Power MOSFET Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qual |
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Infineon Technologies AG |
3-Band TV Tuner IC Suitable for PAL/NTSC and Digital Video Broadcasting Wideband AGC detector for internal tuner AGC − 5 programmable take-over points PLL − 2 programmable time constants 2 s 4 independent I C addresses s Full ESD protection 2 s I C bus protocol compa |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW |
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Infineon |
MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased |
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Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030... Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Chara |
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Desde 2024. D4U Semiconductor.
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