| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor Saturation Voltage IC= 1.0A; IB= 50mA VCE(sat)-3NOTE Collector-Emitter Saturation Voltage IC= 2.0A; IB= 50mA VCE(sat)-4NOTE Collector-Emitter Saturation Voltage IC= 6.0A; IB= 150mA VCE(sat)-5NOTE Collector-Emitter Saturation Voltage IC= 6A; IB= 3 |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor icon PNP Power Transistor STD2805 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-0.1mA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 V( |
|
Desde 2024. D4U Semiconductor.
|