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Inchange Semiconductor |
N-Channel MOSFET Transistor 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=25A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=18A IGSS Gate-Body Leakage Current VGS= ±10V;VDS= 0 IDSS Zero Gate Voltage Drain Current |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 50µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=18A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9A IGSS Gate-Body Leakage Current VGS= ±10V;VDS= 0 IDSS Zero Gate Voltage Drain Current VD |
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Desde 2024. D4U Semiconductor.
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