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Inchange Semiconductor |
Silicon NPN Power Transistors own Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE |
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Desde 2024. D4U Semiconductor.
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