No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
Power Transistor -Base Breakdown Voltage IC= -500μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current |
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Inchange Semiconductor |
Power Transistor ltage Collector-emitter saturation voltage Collector cut-off current DC current gain CONDITIONS IC=-10mA ; IB=0 B KSA1614 MIN -55 -80 -5 TYP. MAX UNIT V V V IC=-500μA ; IE=0 IE=-500μA ; IC=0 IC=-1A ;IB=-0.1A B -0.15 -0.5 -50 V μA VCB=-50V; |
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