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Inchange Semiconductor |
N-Channel MOSFET Transistor PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 800 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 4.3 5.0 Ω IGSS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 900 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 6.4 Ω IGSS Gate |
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Inchange Semiconductor |
N-Channel MOSFET Transistor MBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 900 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 6.4 Ω IGSS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ain-Source Breakdown Voltage VGS=0; ID= 10mA MIN TYP MAX UNIT 900 V VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3.5A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate V |
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Inchange Semiconductor |
N-Channel MOSFET Transistor GS=10V; ID=2A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 2SK1638 MIN TYP MAX UNIT 900 V 2.0 3.0 4.0 V 5.5 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make change |
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Inchange Semiconductor |
N-Channel MOSFET Transistor DS=60V; VGS= 0 2SK1635 MIN TYP MAX UNIT 60 V 1.0 5.0 V 0.03 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presen |
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Inchange Semiconductor |
N-Channel MOSFET Transistor GS=10V; ID=1.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=700V; VGS= 0 2SK1631 MIN TYP MAX UNIT 700 V 2.0 3.0 4.0 V 4.4 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make chan |
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Inchange Semiconductor |
N-Channel MOSFET Transistor GS=10V; ID=2A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=700V; VGS= 0 2SK1630 MIN TYP MAX UNIT 700 V 2.0 3.0 4.0 V 4.4 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make change |
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Inchange Semiconductor |
N-Channel MOSFET Transistor V; ID=4A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=5A;RL=30Ω 2SK1609 MIN TYP MAX UNIT 500 V 1.0 5.0 V 0.7 1.0 Ω ±1 uA |
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Inchange Semiconductor |
N-Channel MOSFET Transistor V; ID=3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=3A;RL=50Ω 2SK1608 MIN TYP MAX UNIT 500 V 1.0 5.0 V 1.35 1.70 Ω ±1 uA |
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Inchange Semiconductor |
N-Channel MOSFET Transistor MBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 800 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 4.3 5.0 Ω I |
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Inchange Semiconductor |
N-Channel MOSFET Transistor V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=7A 0.34 0.45 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±1 uA IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 100 uA ton Turn-on time toff Turn-off time 110 ns |
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Inchange Semiconductor |
N-Channel MOSFET Transistor RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A 0.56 0.75 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±1 uA IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 100 uA ton Turn-on time toff Turn-off time 70 ns VGS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor V; ID=3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=3A;RL=50Ω 2SK1605 MIN TYP MAX UNIT 450 V 1.0 5.0 V 1.0 1.3 Ω ±1 uA |
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Inchange Semiconductor |
2SK1632 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Current VDS=500V; VGS= 0 2SK1680 MIN TYP MAX UNIT 500 V 2.0 4.0 V 0.35 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained her |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Current VDS=450V; VGS= 0 2SK1677 MIN TYP MAX UNIT 450 V 2.0 4.0 V 0.39 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained here |
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Inchange Semiconductor |
N-Channel MOSFET Transistor VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=300V; VGS= 0 MIN TYP MAX UNIT 300 V 2.0 4.0 V 0.15 Ω ±100 nA 500 uA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn |
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Inchange Semiconductor |
N-Channel MOSFET Transistor VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0 MIN TYP MAX UNIT 250 V 2.0 4.0 V 0.13 Ω ±100 nA 500 uA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Current VDS=300V; VGS= 0 2SK1674 MIN TYP MAX UNIT 300 V 2.0 4.0 V 0.2 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained here |
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Desde 2024. D4U Semiconductor.
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