Inchange Semiconductor IXF Hoja de datos

No.	parte #	Fabricante	Descripción
1	IXFH170N10P	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 170A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
2	IXFX64N50Q3	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D
3	IXFK180N07	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 70V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE
4	IXFH6N120P	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.75Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
5	IXFY26N30X3	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION