| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variati |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability ·RoHs Product. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Desde 2024. D4U Semiconductor.
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