| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
2SD428 CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICB |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor mbient 71.4 ℃/W MJD42C isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitte |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors -Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB |
|
Desde 2024. D4U Semiconductor.
|