| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
Power Transistor A; IE=0 IE= 50μA; IC=0 100 V V(BR)CBO Collector-Base Beakdown Voltage 100 V V(BR)EBO Emitter-Base Beakdown Voltage 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V Base-Emitter Saturation Voltag |
|
|
|
|
Inchange Semiconductor |
Power Transistor Breakdown Voltage IC= 10mA, IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE=0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 20mA B 2.0 V |
|
|
|
|
Inchange Semiconductor |
2SD2236 wn Voltage IC= 50μA; IE=0 V(BR)EBO Emitter-Base Beakdown Voltage IE= 50μA; IC=0 100 V 100 V 5V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB=B 0.3A ICBO Collector Cutoff Cu |
|
Desde 2024. D4U Semiconductor.
|