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Inchange Semiconductor |
Silicon NPN Power Transistor TIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V hFE DC Curr |
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Inchange Semiconductor |
Silicon NPN Power Transistor ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.0 V VBE(sat) Base-Emitter Sat |
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Inchange Semiconductor |
Silicon NPN Power Transistor ONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.3 V hFE DC Curr |
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Inchange Semiconductor |
Silicon NPN Power Transistor ITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.65A 1.3 V hFE DC C |
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Desde 2024. D4U Semiconductor.
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