| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
Silicon NPN Power Transistor se specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat |
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Inchange Semiconductor |
Silicon NPN Power Transistor ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation |
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Inchange Semiconductor |
Silicon NPN Power Transistor tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4525AX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage |
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Inchange Semiconductor |
Silicon NPN Power Transistor r Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4522AF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown |
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Inchange Semiconductor |
Silicon NPN Power Transistor therwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 800 7.5 V V VCE(sat) Collector-Emitter Saturati |
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Desde 2024. D4U Semiconductor.
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