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Inchange Semiconductor |
N-Channel MOSFET Transistor wn Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Voltage IS=4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Vol |
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Desde 2024. D4U Semiconductor.
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