No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay drivers isc Product Specific |
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