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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS Corporation |
Converter - Brake - Inverter Module q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM i²t TVJ TVJ = 25°C TVJ = 150°C; TK = 70°C TVJ = 45°C; t = 10 ms sine 50 Hz TVJ = 125°C Conditions Maximum Ratings 1200 36 11 250 310 +150 V A A A A²s °C q q q q q NPT IGBT technology Sq |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS |
Rectifier Diode |
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IXYS Corporation |
Converter - Brake - Inverter Module • NPT IGBT technology Square RBSOA, no latchup • Free wheeling diodes with Hiperfast and soft recovery behaviour • Isolation voltage 2500 V~ • Built in temperature sense • High level of integration: one module for complete drive system • Direct Coppe |
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IXYS Corporation |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling diode |
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IXYS |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free |
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IXYS |
Converter - Brake - Inverter Module q High level of integration - only one power semiconductor module required for the whole drive q Fast rectifier diodes for enhanced EMC behaviour q NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ru |
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IXYS |
Converter - Brake - Inverter Module ● High level of integration - only one power semiconductor module required for the whole drive ● Fast rectifier diodes for enhanced EMC behaviour ● NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ru |
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Desde 2024. D4U Semiconductor.
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