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IXYS Corporation |
Converter - Brake - Inverter Module (CBI2) ● High level of integration - only one power semiconductor module required for the whole drive ● Fast rectifier diodes for enhanced EMC behaviour ● NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ru |
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IXYS Corporation |
Converter - Brake - Inverter Module q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM i²t TVJ TVJ = 25°C TVJ = 150°C; TK = 70°C TVJ = 45°C; t = 10 ms sine 50 Hz TVJ = 125°C Conditions Maximum Ratings 1600 55 25 370 680 +150 V A A A A²s °C q q q q q NPT IGBT technology Sq |
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IXYS Corporation |
Converter - Brake - Inverter Module q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.5 1.4 1.2 1 1.7 0.15 V V mA mA µs 1.3 K/W q VF IR trr RthJC IF = 30 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C VR = 100 V |
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IXYS Corporation |
Converter - Brake - Inverter Module q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM i²t TVJ TVJ = 25°C TVJ = 150°C; TK = 70°C TVJ = 45°C; t = 10 ms sine 50 Hz TVJ = 125°C Conditions Maximum Ratings 1200 36 11 250 310 +150 V A A A A²s °C q q q q q NPT IGBT technology Sq |
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IXYS |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • Inverter with Trench IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling di |
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IXYS Corporation |
Converter - Brake - Inverter Module (CBI3) ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.2 1.2 0.6 1.4 0.02 V V mA mA ● ● VF IR RthJC IF = 50 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C (per diode) ● High level |
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IXYS Corporation |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling diode |
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IXYS Corporation |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • Inverter with NPT3 IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling diod |
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IXYS Corporation |
Converter - Brake - Inverter Module q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM i²t TVJ TVJ = 25°C TVJ = 150°C; TK = 70°C TVJ = 45°C; t = 10 ms sine 50 Hz TVJ = 125°C Conditions Maximum Ratings 1200 36 11 250 310 +150 V A A A A²s °C q q q q q NPT IGBT technology Sq |
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IXYS Corporation |
Converter - Brake - Inverter Module q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM i²t TVJ TVJ = 25°C TVJ = 150°C; TK = 70°C TVJ = 45°C; t = 10 ms sine 50 Hz TVJ = 125°C Conditions Maximum Ratings 1200 36 11 250 310 +150 V A A A A²s °C q q q q q NPT IGBT technology Sq |
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IXYS Corporation |
Converter - Brake - Inverter Module q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.3 1.3 1 1 1.6 0.1 V V mA mA µs 1.47 K/W q VF IR trr RthJC IF = 10 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C VR = 100 V; |
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IXYS Corporation |
Converter - Brake - Inverter Module q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.3 1.3 1 1 1.6 0.1 V V mA mA µs 1.47 K/W q VF IR trr RthJC IF = 10 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C VR = 100 V; |
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IXYS Corporation |
Converter - Brake - Inverter Module q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM i²t TVJ TVJ = 25°C TVJ = 150°C; TK = 70°C TVJ = 45°C; t = 10 ms sine 50 Hz TVJ = 125°C Conditions Maximum Ratings 1600 36 11 250 310 +150 V A A A A²s °C q q q q q NPT IGBT technology Sq |
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IXYS Corporation |
Converter - Brake - Inverter Module • NPT IGBT technology Square RBSOA, no latchup • Free wheeling diodes with Hiperfast and soft recovery behaviour • Isolation voltage 2500 V~ • Built in temperature sense • High level of integration: one module for complete drive system • Direct Coppe |
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IXYS Corporation |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling diode |
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IXYS |
Converter - Brake - Inverter Module |
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IXYS |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • Inverter with Trench IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling di |
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IXYS |
Converter - Brake - Inverter Module €€High level of integration - only one power semiconductor module required for the whole drive €€NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness €€Epitaxial free wheeling diodes with Hipe |
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IXYS |
Converter - Brake - Inverter Module €€High level of integration - only one power semiconductor module required for the whole drive €€NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness €€Epitaxial free wheeling diodes with Hipe |
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IXYS |
Converter - Brake - Inverter Module • High level of integration - only one power semiconductor module required for the whole drive • IGBT technology with low saturation voltage, low switching losses and tail current, high RBSOA and short circuit ruggedness • Epitaxial free |
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Desde 2024. D4U Semiconductor.
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