IXYS M16 Hoja de datos

No.	parte #	Fabricante	Descripción
1	M1609NC240	IXYS	Fast Recovery Diode
2	GWM160-0055X1	IXYS Corporation	Three phase full Bridge • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
3	M1609NC260	IXYS	Fast Recovery Diode
4	M1609NC220	IXYS	Fast Recovery Diode
5	M1609NC200	IXYS	Fast Recovery Diode
6	GWM160-0055P3	IXYS Corporation	Three phase full bridge • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB
7	DMA30IM1600PZ	IXYS	Standard Rectifier / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: TO-263 (D2Pak-H
8	DMA10IM1600PZ	IXYS	Standard Rectifier / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: TO-263 (D2Pak-H