IXYS K26 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K2623TT500	IXYS	Medium Voltage Thyristor
2	K2623TD480	IXYS	Medium Voltage Thyristor
3	K2623TD500	IXYS	Medium Voltage Thyristor
4	K2623TD520	IXYS	Medium Voltage Thyristor
5	K2623TV480	IXYS	Medium Voltage Thyristor
6	IXFK26N90	IXYS Corporation	(IXFx2xN90) HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC
7	IXFK260N17T	IXYS	GigaMOS Power MOSFET z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrins
8	K2623TC480	IXYS	Medium Voltage Thyristor
9	K2623TC500	IXYS	Medium Voltage Thyristor
10	K2623TC520	IXYS	Medium Voltage Thyristor
11	K2623TT480	IXYS	Medium Voltage Thyristor
12	K2623TV500	IXYS	Medium Voltage Thyristor
13	K2623TV520	IXYS	Medium Voltage Thyristor
14	IXFK260N17T	IXYS	GigaMOS Power MOSFET z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrins
15	W5130MK260	IXYS	Rectifier Diode
16	K2623TT520	IXYS	Medium Voltage Thyristor
17	IXFK26N60Q	IXYS	HiPerFET Power MOSFET l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 25 1 0.25 V V nA µA mA Ω l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, I