| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Thyristor Modules • Isolation voltage 3600 V~ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • DC motor control • Light and temperature control • Softstart AC motor controller • Solid state switches Adva |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Thyristor Modules • Isolation voltage 3600 V~ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • DC motor control • Light and temperature control • Softstart AC motor controller • Solid state switches Adva |
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IXYS |
Thyristor Modules • Isolation voltage 3600 V~ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • DC motor control • Light and temperature control • Softstart AC motor controller • Solid state switches Adva |
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IXYS |
Thyristor Modules • Isolation voltage 3600 V~ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • DC motor control • Light and temperature control • Softstart AC motor controller • Solid state switches Adva |
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IXYS |
Thyristor Modules • Isolation voltage 3600 V~ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • DC motor control • Light and temperature control • Softstart AC motor controller • Solid state switches Adva |
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IXYS |
Thyristor Modules • Isolation voltage 3600 V~ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • DC motor control • Light and temperature control • Softstart AC motor controller • Solid state switches Adva |
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IXYS |
Medium Voltage Thyristor |
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IXYS Corporation |
HiPerFET Power MOSFETs International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated |
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IXYS |
IGBT International Standard Packages Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages High Power Density Low Gate Drive Req |
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IXYS |
IGBT z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Diode Modules |
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IXYS |
Diode z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requi |
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IXYS Corporation |
HiPerFET Power MOSFETs l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Con |
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IXYS |
IGBT z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applica |
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IXYS Corporation |
Polar MOSFETs z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 |
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Desde 2024. D4U Semiconductor.
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