IXYS IXX Hoja de datos

No.	parte #	Fabricante	Descripción
1	IXXH110N65C4	IXYS	IGBT  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Capability  Short Circuit Capability  International Standard Package Advantages  High Power Density  175°C Rated  Extremely Rugged  Low Gate Drive Requirement Applications  UPS  Mo
2	IXXH30N65B4	IXYS	650V IGBTs z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package Advantages z High Power Density z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specif
3	IXXH100N60B3	IXYS	IGBT z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver
4	IXXH100N60C3	IXYS	IGBT z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver
5	IXXH150N60C3	IXYS	IGBT  International Standard Package  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inver
6	IXXH50N60B3	IXYS	600V IGBTs  Optimized for 5-30kHz Switching  Square RBSOA  Avalanche Capability  Short Circuit Capability  International Standard Packages Advantages  High Power Density  175°C Rated  Extremely Rugged  Low Gate Drive Requirement  Easy to Parallel Appl
7	IXXH30N60C3D1	IXYS	600V IGBTs  Optimized for 20-60kHz Switching  Square RBSOA  Anti-Parallel Ultra Fast Diode  Avalanche Capability  Short Circuit Capability  International Standard Package Advantages  High Power Density  175°C Rated  Extremely Rugged  Low Gate Drive Re
8	IXXX200N60B3	IXYS	600V IGBT z International Standard Packages z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve
9	IXXK160N65B4	IXYS	650V IGBT z Optimized for 10-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Packages z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unles
10	IXXK100N60B3H1	IXYS	Diode z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requi
11	IXXK200N65B4	IXYS	650V IGBT  Optimized for 10-30kHz Switching  Square RBSOA  Short Circuit Capability  International Standard Packages  High Current Handling Capability Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inverters  UPS  Moto
12	IXXX200N65B4	IXYS	650V IGBT  Optimized for 10-30kHz Switching  Square RBSOA  Short Circuit Capability  International Standard Packages  High Current Handling Capability Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inverters  UPS  Moto
13	IXXK300N60B3	IXYS	600V IGBT z Optimized for 10-30kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve
14	IXXX300N60B3	IXYS	600V IGBT z Optimized for 10-30kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve
15	IXXK300N60C3	IXYS	600V IGBT z Optimized for 20-60kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve
16	IXXX300N60C3	IXYS	600V IGBT z Optimized for 20-60kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve
17	IXXK100N60C3H1	IXYS	Diode z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver
18	IXXK200N60C3	IXYS	600V IGBT  International Standard Packages  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inve
19	IXXX200N60C3	IXYS	600V IGBT  International Standard Packages  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inve
20	IXXK200N60B3	IXYS	600V IGBT z International Standard Packages z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve