| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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IXYS Corporation |
IXSH40N60 International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
IXSH15N120A •2 Mounting torque . 1.15/10 Nm/lb-in. 6 300 g °C generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications nd Max. Lead Temperature for Soldering (1.6mm from case for 1 |
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IXYS Corporation |
High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062 |
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IXYS Corporation |
Low VCE(sat) IGBT - Short Circuit SOA Capability • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, |
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IXYS Corporation |
Low VCE(sat) IGBT l l Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) m |
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IXYS Corporation |
IGBT • • • • • DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity 50/60 Hz, RMS t = 1 min 2500 300 Maximum lead temperature for soldering 1.6 |
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IXYS Corporation |
Short Circuit SOA Capability • International standard packages: JEDEC TO-247, TO-264& TO-268 • Short Circuit SOA capability • High freqeuncy IGBT and antiparallel FRED in one package • New generation HDMOSTM process Applications Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C Ma |
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IXYS Corporation |
Low VCE(sat) IGBT International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
Low VCE(sat) IGBT International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
Low VCE(sat) IGBT International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
High Voltage IGBT International standard package miniBLOC Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ UL registered E 153432 Low VCE(sat) - for minimum on-state conduction losses Low collector-to-case capacitance (<100 pF |
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IXYS Corporation |
High Current IGBT International standard package miniBLOC Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ UL registered E 153432 Low VCE(sat) - for minimum on-state conduction losses Low collector-to-case capacitance (< 100 p |
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IXYS |
High Speed IGBT • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast Fall Time for switching speeds up to 50 kH |
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IXYS Corporation |
High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062 |
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IXYS Corporation |
HIGH VOLTAGE IGBT WITH DIODE Hole-less TO-247 package for clip mounting High frequency IGBT and anti-parallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recov |
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IXYS Corporation |
High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062 |
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IXYS Corporation |
IGBT l Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive |
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IXYS Corporation |
Low VCE(sat) IGBT - Short Circuit SOA Capability • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, |
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IXYS Corporation |
High Speed IGBT • International standard packages: JEDEC TO-247, TO-264& TO-268 • Short Circuit SOA capability • Medium freqeuncy IGBT and antiparallel FRED in one package • New generation HDMOSTM process Applications • AC motor speed control • DC servo and robot dr |
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IXYS Corporation |
High Speed IGBT • International standard packages: JEDEC TO-247, TO-264& TO-268 • Short Circuit SOA capability • Medium freqeuncy IGBT and antiparallel FRED in one package • New generation HDMOSTM process Applications • AC motor speed control • DC servo and robot dr |
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Desde 2024. D4U Semiconductor.
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