| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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IXYS |
IXRH50N60 q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS Corporation |
IGBT with Reverse Blocking capability q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS Corporation |
IGBT with Reverse Blocking capability q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS Corporation |
IGBT with Reverse Blocking capability q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS Corporation |
Power Discretes/IGBTs/Reverse Blocking Series • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epo |
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IXYS Corporation |
IGBT with Reverse Blocking capability q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS |
30A Low-Side RF MOSFET Driver Description •High Peak Output Current •Low Output Impedance •Low Quiescent Supply Current •Low Propagation Delay •High Capacitive Load Drive Capability •Wide Operating Voltage Range Applications •RF MOSFET Driver •Class D and E RF Generators •Multi |
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IXYS |
15 A Low-Side RF MOSFET Driver and wide safety margin in operating voltage and power make the IXRFDSM607X2 unmatched in performance and value. The surface mount IXRFDSM607X2 is packaged in a low-inductance surface mount package incorporating advanced layout techniques to minimize |
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IXYS |
IGBT with Reverse Blocking capability • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epo |
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IXYS |
15A Dual Low-Side RF MOSFET Driver and wide safety margin in operating voltage and power make the IXRFD615X2 unmatched in performance and value. The surface mount IXRFD615X2 is packaged in a lowinductance RF package incorporating advanced layout techniques to minimize stray lead induc |
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IXYS |
IGBT • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of satura |
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Desde 2024. D4U Semiconductor.
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