| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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IXYS Corporation |
IXEH40N120 • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epo |
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IXYS Corporation |
NPT3 IGBT • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • ISOPLUS 247TM package - isolated back surface - low coupling capacity |
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IXYS Corporation |
NPT3 IGBT • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epo |
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IXYS |
IGBT • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFRED™ diode - fast reverse recovery - low operating forw |
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IXYS |
IGBT • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFRED™ diode - fast reverse recovery - low operating forw |
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IXYS Corporation |
NPT3 IGBT • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epo |
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IXYS Corporation |
NPT3 IGBT in miniBLOC package • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPerFREDTM diode - fast reverse recovery - low operating for |
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IXYS Corporation |
NPT3 IGBT in miniBLOC package • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPerFREDTM diode - fast reverse recovery - low operating for |
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IXYS Corporation |
NPT3 IGBT with Diode • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diode - fast reverse recovery - low operating forward volt |
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IXYS |
Very High Voltage IGBT Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation UL Recognized Package High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages H |
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IXYS |
NPT3 IGBT • NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPerFREDTM diode - fast reverse recovery - low operating forwar |
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IXYS |
NPT3 IGBT • NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPerFREDTM diode - fast reverse recovery - low operating forwar |
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IXYS |
300-Output ePaper Gate Driver • • • • • • • 300 Output Gate Driver 42V HV Output Drive Capable (VDD to VEE) 3.3V Logic Operation Internal Pattern Generator Reset, Blanking, Polarity Inversion Bypass Function Cascadeable With Bidirectional Shift Control IXEP2300 Description The |
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Desde 2024. D4U Semiconductor.
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