IXYS Corporation P5N Hoja de datos

No.	parte #	Fabricante	Descripción
1	IXTP5N50P	IXYS Corporation	Power MOSFET  International Standard Packages  Low QG  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Switch-Mode and Resonant-Mode Powe
2	IXFP5N100P	IXYS Corporation	Power MOSFET z z z z z z z International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS V
3	P5N50	IXYS Corporation	IXTP5N50P z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Space savin