| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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Vishay Telefunken |
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case D D D D D D High radiant power and radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in nea |
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Vishay Telefunken |
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case D D D D D D High radiant power Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Rat |
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ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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|
ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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|
ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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|
ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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|
|
ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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|
|
ITT |
Cannon Trident Connector System • Easy cost effective installation. • Integrally molded latches and connector polarization. • Recognized under the component program of UL Inc. and CSA. • Inter-connector discrimination facilities available. • Accepts formed (stamped) or machined con |
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|
Vishay Telefunken |
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case D D D D D D D Extra high radiant intensity High radiant power Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiatio |
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Vishay Telefunken |
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infra |
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Desde 2024. D4U Semiconductor.
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